RHEED Unit

RHEED

Fundamental unit of PASCAL Reflection High-Energy Electron Diffraction (RHEED) consists a compact size electron-gun with mounting via CF1.33" (ICF34) flange.

The compact size e-gun brings easy mount to a vacuum chamber or easy maintenance.

Reflection High-Energy Electron Diffraction (RHEED), a reflection high-energy electron diffraction equipment, consists of a CF 1.33"" flange mount and a small size electron gun.
The compact electron gun enables easy maintenance and allows parallel operation of other optional devices under high pressure conditions or when observing scanning plane samples of the electron beam.

PLD System

PLD / Laser-MBE System Lines

The Laser Molecular Beam Epitaxy System (MBE) is a PLD (Plused Laser Deposition) equipment that uses a high-power pulsed laser to melt sputtering targets during PVD.
It enables atomic control of thickness during deposition of unit or multi-element thin films to manufacture ultra-thin films or super-lattice thin films and can manufacture thin films with the same composition ratio as raw materials which is used for high-quality thin films. It is largely classified into Compact type and Mobile Combi type.

Atom Scattering Spectroscopy

TOFLAS-3000

TOFLAS®-3000, an atomic spanning surface analysis equipment, applies the measurement principle of ion scattering spectroscopy (CAICISS) and uses atomic beams rather than ions in the incident probe. Element analysis and structural analysis are possible immediately during metal, semiconductor, insulator sample surface or thin film growth.

Target

Sputtering Target

We provide metal oxide semiconductors such as IGZO (InGaZnOx) which are used for TFT purposes and high-quality transparent conductive film materials (TCO) such as WIDE BAND GAP materials and RRAM materials.